柔性氧化物薄膜晶体管栅绝缘层的研究进展

Research Progress of Gate Dielectric Layer for Flexible Oxide Thin-Film Transistors

柔性氧化物薄膜晶体管(Thin-film transistor,TFT)因具有迁移率高、电流开关比大、器件均一性好、柔韧性好和轻薄等优点而备受业界关注,广泛应用于柔性有机发光二极管(OLED)显示、柔性传感、仿生突触等领域。其中,栅绝缘层对柔性氧化物TFT的性能至关重要,它不仅影响着器件的基本电学性能,对器件的偏压、光照稳定性也有着明显的影响。因此,栅绝缘层材料及其制备工艺是实现高性能柔性氧化物TFT制备的关键。本工作综述了柔性氧化物TFT栅绝缘层的研究进展,首先介绍了几种典型的栅绝缘层薄膜制备技术;然后介绍了可应用于柔性氧化物TFT的栅绝缘层材料,包括无机高介电常数(高K)栅绝缘层材料(如氧化锆(ZrO_(2))、氧化铪(HfO_(2))和氧化铝(Al_(2)O_(3)))、有机栅绝缘层材料(如聚乙烯吡咯烷酮(PVP)、聚甲基丙烯酸甲酯(PMMA)和聚乙烯醇(PVA))以及双电层电解质栅绝缘层材料,并论述了几种栅绝缘层材料的优缺点;最后对柔性氧化物TFT的栅绝缘层技术特点和应用进行了总结,并对未来栅绝缘层技术的发展和研究进行了展望。

Flexible oxide thin-film transistors(TFTs)are widely used in lots of fields such as flexible organic light-emitting diode(OLED)displays,flexible sensors and bionic synapses,and so on,for its advantages of high mobility,large on/off current ratio,good device uniformity,good flexibility,light and thin.The gate dielectric layer is crucial for flexible oxide TFTs.It not only affects the basic electrical performance of the device,but also has a significant impact on the electrical stability under bias or light stress.Therefore,the raw and preparation process of gate dielectric layer is the key to achieving high-performance flexible oxide TFTs.In this work,the research progress of gate dielectric layer for flexible oxide TFTs was reviewed.Firstly,several typical film preparation techniques were introduced.Then,gate dielectric materials for flexible oxide TFTs were described in detail,including inorganic high dielectric constant(high-K)dielectric materials such as zirconium oxide(ZrO_(2)),hafnium oxide(HfO_(2))and aluminum oxide(Al_(2)O_(3)),organic dielectric materials such as polyvinyl pyrrolidone(PVP),polymethyl methacrylate(PMMA)and polyvinyl alcohol(PVA),and double electric layer electrolyte dielectric materials.The advantages and disadvantages of these dielectric materials were discussed.Finally,it summarized the technical characteristics and applications of gate dielectric layer for flexible oxide TFTs and prospected the future development and research of gate dielectric layer technologies.