三维雕刻法制备定向结构Si_(3)N_(4)/Al电子封装基片研究

Study on preparation of oriented Si_(3)N_(4)/Al electronic packaging substrates by three-dimensional engraving method

本文以三维雕刻法和铝合金穿孔熔渗工艺制备了定向结构Si_(3)N_(4)/Al电子封装基片,研究了不同定向孔直径对基片轴向导热系数和径向热膨胀系数的影响.微观形貌分析表明Si_(3)N_(4)陶瓷的烧结是主要包括聚团颗粒之间形成粘结和聚团颗粒内部生成β-Si_(3)N_(4)的过程,聚团颗粒尺寸是影响Si_(3)N_(4)陶瓷性能的主要因素.轴向热导率随着气孔尺寸增加呈增加趋势;气孔尺寸为0.8 mm时,Si_(3)N_(4)/Al电子封装基片导热系数随着温度增加呈减小趋势,最高达到107.1 W·m^(-1)·k^(-1),径向热膨胀系数变化不大.

In this paper,oriented Si_(3)N_(4)/Al electronic packaging substrates were prepared by three-dimensional engraving method and aluminum alloy perforation fusion infiltration process,and the effects of different oriented hole diameters on the axial thermal conductivity and radial coefficient of thermal expansion of the substrates were investigated.The microscopic morphology analysis shows that the sintering of Si_(3)N_(4)ceramics that mainly includes the formation of bonding between agglomerated particles and the generation ofβ-Si_(3)N_(4)inside the agglomerated particles,and the size of the agglomerated particles is the main factor that affects the properties of Si_(3)N_(4)ceramics.The axial thermal conductivity tends to increase with the increase of air hole size,when the air hole size is 0.8 mm,the thermal conductivity of Si 3 N 4/Al electronic packaging substrate tends to decrease with the increase of the temperature,and it reaches up to 107.1 W·m^(-1)·k^(-1),and the radial coefficient of thermal expansion does not change much.