532nm硅基单光子雪崩管制备及其电压调控效应

Fabrication and voltage-tunning effect of 532 nm silicon-based single-photon avalanche photodiodes

硅基单光子雪崩管具备体积小、功耗低、暗计数低、可见光波段量子效率高、探测灵敏度达单光子量级等优势,在交通、医疗和军事等领域有重要应用前景.然而,平面结构硅基单光子雪崩管的暗计数率和可见光-近红外波段单光子探测率仍需提升,掺杂工艺对器件电学特性影响仍较模糊.本文设计并制备了一款可见光-近红外波段具备单光子级探测能力的硅基盖革模式雪崩二极管,雪崩电压为38.1 V,在过偏2.4 V处暗计数率为200 Hz,且532 nm单光子探测效率达到10.56%、850 nm单光子探测效率为6.49%,并通过工艺参数调节实现器件击穿电压调控,调制范围覆盖30~40 V.该器件具备良好的工程应用前景,其光电性能调制效果能进一步应用于硅基盖革管的商业化制造.

Silicon-based single-photon avalanche diodes(SPADs),has the advantages of small size,low power consumption,low dark count rate,high quantum efficiency in visible light band,single-photon sensi⁃tivity,and has important applications in transportation,medical and military fields.However,as for planar silicon-based SPAD,the dark count rate and single photon detection rate in visible and near-infrared band still need to be optimized,and the influences of doping technology on the electrical characteristics of the device are still fuzzy.In this work,a silicon-based Geiger mode APD with single-photon detection was designed and fab⁃ricated,which was capable of detecting ability up to single photon level in the visible and near-infrared band.With the breakdown voltage of 38.1 V,the device achieved a dark count rate of 200 Hz at the excess bias of 2.4 V.The single-photon detection efficiency at 532 nm reached 10.56%,and that of 850 nm is 6.49%.Breakdown voltage tuning effect was achieved through the adjustment of process parameters,and the break⁃down voltage modulation range covers 30~40 V.The device has shown a good engineering application pros⁃pect,and its photoelectric performance modulation effect can be further applied to the commercial manufac⁃ture of silicon-based Geiger mode APD.