功率器件功率循环仿真及引线键合寿命分析

Life Analysis of Power Semiconductor Wire Bonds Based on Power Cycle Simulation Test

在人们对功率半导体器件相关性能要求不断提高的情况下,其封装可靠性得到越来越多的重视。为了使器件整体满足在高温、高频率、大功率、抗辐射等工作条件下的可靠性能力,需重点突破制约三代半导体可靠性发展的新型封装材料或改进封装技术。论文以典型SiC MOSFET为研究对象,通过构建与功率循环试验相适应的仿真方法,研究在典型功率循环条件下器件键合点可靠性问题。在不同键合线线径及循环次数条件下,得到相应的应变及应变能密度,利用损伤累积的能量模型对器件键合点寿命进行了分析计算,实现了采用仿真手段对功率器件在功率循环试验中键合点可靠性的分析与评价。

With the ever-increasing performance requirements of power semiconductor devices,more and more attention has been paid to their packaging reliability.In order to make the device as a whole meet the reliability capabilities under high temperature,high frequency,high power,radiation resistance and other working conditions,it is necessary to focus on breakthroughs in new packaging materials or improved packaging technologies that restrict the development of three-generation semiconductor reliability.In this paper,the typical SiC MOSFET is taken as the research object,and the reliability of the bonding point of the device under typical power cycle conditions is studied by constructing a simulation method suitable for the power cycle test.The corresponding strain and strain energy density are obtained under the conditions of different bonding wire diameters and cycle times.The life of the bonding point of the device is analyzed and calculated using the energy model of damage accumulation.The simulation method is used to realize the anlysis and evaluation of the reliability of the middle bond in power cycle test of the power device.