MOCVD技术制备In_(2)O_(3)紫外光电探测器研究

Research on Fabrication of In_(2)O_(3)Ultraviolet Photodetectors by MOCVD Technology

采用金属有机化学气相沉积(MOCVD)方法分别在蓝宝石、氧化钇稳定氧化锆(YSZ)和蓝宝石上p-GaN衬底上生长In_(2)O_(3)薄膜,生长温度为600℃。利用高分辨X射线衍射仪(HRXRD)、原子力显微镜(AFM)、X射线光电子能谱(XPS)、霍尔系统对3种薄膜进行了表征,结果表明YSZ基In_(2)O_(3)薄膜的最小半峰宽(FWHM)为0.23°,表面粗糙度为1.99 nm,霍尔迁移率为39.9 cm^(2)/(V·s);蓝宝石基In_(2)O_(3)薄膜中氧空位缺陷最少,占总缺陷比为29.37%,霍尔迁移率达到58.3 cm^(2)/(V·s),实现了FWHM为0.31°、表面粗糙度为3.08 nm的高质量薄膜。最终采用蓝宝石基In_(2)O_(3)薄膜制备出具有1.74×10^(14 )Jones高探测率以及光暗电流比约9165.7的紫外光电探测器。

Metal organic chemical vapor deposition(MOCVD)technology was used to grow In_(2)O_(3)films on sapphire,yttria-stabilized zirconia(YSZ),and p-GaN on sapphire substrates,respectively and the growth temperature was 600℃.High-resolution X-ray diffractometer(HRXRD),atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS),and Hall system were used to characterize the three types of films.It is concluded that the full width at half maximum(FWHM)of the YSZ-based In_(2)O_(3)film is 0.23°,the surface roughness is 1.99 nm,and the Hall mobility is 39.9 cm^(2)/(V·s).The oxygen vacancy defects in the sapphire-based In_(2)O_(3)is the least,accounting for 29.37%of the total defect ratio,and the Hall mobility reaches 58.3 cm^(2)/(V·s).And a high-quality film with a FWHM of 0.31°and a surface roughness of 3.08 nm was achieved.Finally,sapphire-based indium oxide was used to prepare an ultraviolet photodetector with a high detection rate of 1.74×1014 Jones and a light-todark current ratio of about 9165.7.