氩气流量对射频CVD法沉积类金刚石碳薄膜的影响

Effect of Argon Gas Flow Rates on the Deposition of Diamond-Like Carbon Thin Films by RF-CVD Technology

文章采用射频CVD沉积法,以甲烷和氢气为反应物,在硅(111)基底上沉积类金刚石碳薄膜,分析不同氩气流量对类金刚石碳薄膜性能的影响。利用激光拉曼光谱仪对类金刚石碳薄膜的结构特征进行分析,发现在1400~1700 cm^(-1)区间,有一个明显的宽G峰,而在1300~1400 cm^(-1)区间,则出现了一个较弱的肩D峰。研究结果表明,当氩气流量为0 ml/min和10 ml/min时制备的薄膜,符合类金刚石碳薄膜的典型特征;并且随着氩气浓度的增大,可以促进类金刚石碳的生长、抑制杂质的生成以及减少类金刚石碳中的含氢量。当氩气浓度增大到一定值后,则开始抑制类金刚石碳的生长,直至无法长出类金刚石碳膜。当氩气流量为10 ml/min时,获得的类金刚石碳薄膜是最好的。

The article used RF-CVD deposition method to deposit diamond-like carbon films on silicon(111)substrate with methane and hydrogen as reactants,and analyzed the effect of different argon gas flow rates on the properties of diamond-like carbon films.Using a laser Raman spectrometer to analyze the structural characteristics of diamond-like carbon films,it was found that there is a clear broad G peak in the range of 1400~1700 cm^(-1),while a weak shoulder D peak appears in the range of 1300~1400 cm^(-1).It was shown that the films prepared when the argon flow rate was 0 ml/min and 10 ml/min were in accordance with the typical characteristics of diamond-like carbon films;and with the increase of argon concentration,the growth of diamond-like carbon,the inhibition of impurity generation,and the reduction of hydrogen content in diamond-like carbon could be promoted.When the argon concentration increased to a certain value,it began to inhibit the growth of diamond-like carbon,until the diamond-like carbon could not be grown.The best diamond-like carbon films were obtained when the argon flow rate was 10 ml/min.