摘要
Although defect engineering opens up new opportunities in the field of gas sensors,the introduction of defects to enhance the gas sensing properties of metal oxide semiconductors(MOSs)has long been neglected.In this review,defect engineering strategies have been systematically introduced,with a focus on employing them for improved gas sensing performances.To keep the subject focused,we take SnO_(2) nanomaterials as an example.Various synthesis methods for defective SnO_(2),including ion/electron/ray/laser-beam irradiation,plasma treatment,heating protocol,chemical reduction,tailoring specially exposed crystal facets and atoms doping,are emphasized.Different roles of defects on the gas sensing process of SnO_(2) are discussed.Finally,critical issues and future directions of defect engineering are presented.This paper provides a platform for better understanding the relationships between synthesis,defect types and gas sensing performances of MOSs.It is also expected to unpack an important research direction for controlled synthesis of defective nanomaterials with other applications,including advanced energy conversion and storage.
基金
supported by the National Natural Science Foundation of China(No.51872173)
the Taishan Scholars Program of Shandong Province,China(No.tsqn201812068)
the Opening Fund of State Key Laboratory of Heavy Oil Processing,China(No.SKLOP202002006)
the Higher School Youth Innovation Team of Shandong Province,China(No.2019KJA013)
the Science and Technology Special Project of Qingdao City,Shandong Province,China(No.20-3-4-3-nsh)
financial support provided by the Natural Science Foundation of Shandong Province,China(No.ZR2021QE092).
