液态前驱体化学气相沉积法生长单层二硒化钨

Growth of Monolayer Tungsten Diselenide via Liquid Precursor Chemical Vapor Deposition

化学气相沉积(CVD)是实现二维(2D)过渡金属硫族化合物(TMDs)制备的简单有效方法。晶核位置的随机分布和生长可控性差是当前实现大面积高质量制备TMDs的一项巨大挑战。本工作以单层二硒化钨的生长为例,采用液态前驱体并调控其浓度使微量金属前驱体高度均匀地分散在生长衬底表面,可有效诱导低过饱和度,从而降低成核密度,最终得到组分分布均匀、高质量的单层二硒化钨。这种液态前驱体化学气相沉积技术可以推广到其他2D材料的生长,为大面积、均匀的高质量2D材料的生长提供了一种更有效的方式。

Chemical vapor deposition(CVD)is a straightforward and efficient technology used for preparing two-dimensional(2D)transition metal chalcogenides(TMDs).However,the random distribution of nucleus position andpoor growth controllability are currently a great challenge to achieve large scale,high quality TMDs preparation.In this study,taked the growth of monolayer tungsten diselenide(WSe 2)as an example.Utilized a liquid phase precursor and adjusted its concentration to prompt the trace metal precursor evenly disperse on the surface of the growth substrate.This approach should reduce nucleation density effectively,and induced low saturation.it’s helpful to successfully formate a monolayer WSe 2 with uniform component distribution and high quality.This liquid precursor CVD technique introduced here can be extended to the growth of other 2D materials,and offer a more practical approach for achieving large area,uniform,and high-quality 2D materials.