硅绝压传感器封接技术分析与实践

Bonding Techniques of Silicon Absolute Pressure Transducer

分析硅绝压传感器的2种封接技术——金硅共晶法和静电密封法。重点介绍了静电密封法的原理、关键技术、封接参数及密封质量,漏率达1.33×10^(-10)P_a·L/s,并强调应将真空膜盒作为静态系统来计算其漏率。

Two bonding techniques of silicon absolute pres- sure transducer is analysed,they are Au-Si eutectic and electrostatic sealing.The principle,key technology,parame- ter and quality of electrostatic sealing are presented.The leakage rate of sensor are 1.33×10^(-10)P_a·L/s.It is emphe- sized to regard vacuous device as a static system to calculate its leakage rate.