4H-SiCN离子注入层的特性(英文)

Characteristics of N^+ Implanted Layer of 4H-SiC

研究了在 4 H- Si C p型外延层上用 N离子注入制备 n型层的方法及其特性 ,注入层的浓度分布用蒙特卡罗分析软件 TRIM进行了模拟 .为了测试注入层的特性 ,制备了横向肖特基二极管和 TL M(transfer length m ethod)结构 .测得的 N激活浓度为 3.0× 10 1 6 cm- 3,计算出激活率为 0 .0 2 .注入层方块电阻为 30 kΩ/□ ,电阻率为 0 .72 Ω·cm,并计算出电子迁移率为 30 0 cm2 / (V· s) .

The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.