摘要
采用正交实验方法研究了掺杂Nb2 O5、CeO2 、SiO2 、CaCO3 等对TiO2 压敏电阻陶瓷电性能的影响。利用XRD及SEM实验方法分析了样品的物相和微观形貌 ,发现有第二相产生。这种新的第二相的存在 ,对压敏电压有明显的影响。优选典型配方制得样品的主要电性能指标为 :V1mA=10～ 2 0V ,V10mA=2 0～ 3 0V ,α =3～ 5 ,电容C =5 0～ 90nF ,损耗tgδ <0 .8。
Influence of Nb 2O 5, CeO 2, SiO 2 and CaCO 3 doping on electrical properties of TiO 2 based varistor was investigated by orthogonal test method. The crystal structure and micro morphology of the varistor prepared by standard ceramic route was analyzed by XRD and SEM, respectively. Both results revealed a temperature dependent secondary phase in the samples, which has distinct influence on the nonlinear voltage of the varistor. The main electrical properties of the sample with optimized composition are as follows: V 1mA =10～20V, V 10mA =20～30V, α =3～5, C =50～90nF and tg δ <0.8.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2002年第6期635-637,共3页
Journal of Functional Materials
关键词
二氧化钛
掺杂
压敏电阻器
电性能
titanium dioxide
doping
varistor
electrical property
