SiCl_4-H_2为气源低温制备多晶硅薄膜

Preparation of poly-silicon thin film in low temperature using SiCl_4/H_2 gas source

以SiCl4 H2 为气源 ,用等离子体化学气相沉积技术 ,在衬底温度仅为 2 0 0℃时能获得多晶硅薄膜。最大晶粒达 1.5 μm ,结晶度在 90 %以上。薄膜中不含Cl、H、C、N、O等杂质 ,暗电导率高达 10 -4Ω-1·cm-1,光照稳定性好。对氯元素在低温成膜中的作用进行初步讨论。

The Polycrystalline silicon films have been obtained under the substrate temperature of 200℃ using SiCl 4/H 2 mixture gases in a conventional radio frequency glow discharge plasma chemical vapor deposition system. The maximum grain size measured by SEM is 1.5μm. The crystallinity of the film is over 90%. The films were composed of pure silicon, without impurities such as Cl, H, C, N, and O, etc. The dark conductivity was up to 10 -4 Ω -1 ·cm -1 and it has excellent stability under illuminative conditions. In this paper, the effect of Cl element on low temperature growth of poly Si film will be discussed.