摘要
Zinc has been diffused into n-type InxGa1-xAs, InP and GaAs in closed ampoules, and the experimental data for InxGa1-xAs rarely reported previously have been obtained. Theoretically the linear relationship between logarithmic diffusion coefficient InD and the composition x has been demonstrated, which is in good agreement with the experimental results. The calculated diffusion junction depth for InGaAs based on the diffusion model in which D∝ c2 is assumed also agrees well with that of the experiment. Finally the overall diffusion time in a multilayer heterostructure was approximated as t=(Σ )2.
ＤｉｆｆｕｓｉｏｎｏｆＺｉｎｃｉｎＩｎ_ｘＧａ_（１－ｘ）Ａｓ，ＩｎＰａｎｄＧａＡｓ￥ＺＨＵＡＮＧＷａｎｒｕ；ＺＯＵＺｈｅｎｇｚｈｏｎｇ；ＷＡＮＧＦｅｎｇ；ＳＵＮＦｕｒｏｎｇ（ＩｎｓｔｉｔｕｔｅｏｆＳｅｍｉｃｏｎｄｕｃｔｏｒｓ，ＡｃａｄｅｍｉａＳｉｎｉ...
