摘要
ＰｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅＰｒｏｐｅｒｔｉｅｓｏｆＳｉ_（１－ｘ）Ｇｅ_ｘ／ＳｉＳｔｒａｉｎｅｄＬａｙｅｒＳｔｒｕｃｔｕｒｅｓ￥ＰＥＮＧＹｉｎｇｃａｉ（ＨｅｂｅｉＵｎｉｖｅｒｓｉｔｙ，Ｂａｏｄｉｎｇ０７１００２．ＣＨＮ）Ａｂｓｔｒａｃｔ：Ｔｈｅ...
The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years. The photoluminescence has become a brisker subject in the studies of its various optical properties. A research development on photoluminescence properties of some new Si1-x Gex/Si strained layer structures is introduced.
关键词
应变层超点阵
光致发光
光电子器件
量子阱
Strained Layer Superlattices
Photoluminescence Properties
Optoelectronic Devices
Quantum Wells
