摘要
A simple photoelastic optical modulator with a Fabry-Perot cavity based on the silicon-on-insulator system was fabricated. A 50 % modulation depth has been obtained at current density of about 1. 5 x 103 A/cm2. The insertion loss was about 15 dB.
ＰｈｏｔｏｅｌａｓｔｉｃＦａｂｒｙ－ＰｅｒｏｔＯｐｔｉｃａｌＭｏｄｕｌａｔｏｒＢａｓｅｄｏｎａＳｉｌｉｃｏｎ－ｏｎ－ＩｎｓｕｌａｔｏｒＳｔｒｕｃｔｕｒｅ￥ＹＵＬｉｓｈｅｎ（ＢｅｉｊｉｎｇＵｎｉｖｅｒｓｉｔｙ，Ｂｅｉｊｉｎｇ１００８７１，ＣＨＮ）ＧＵＡ...
