MPCVD中基片加热材料的温度场摄动模型研究

Study on perturbation model of substrate heating materials′ temperature fields in MPCVD

为改进微波等离子体化学气相沉积 (MPCVD)装置中的加热系统 ,提出了用基片加热材料替代常规加热方式的新的技术路线 ;建立了基片加热材料的微波轴对称温度场模型并得到了一般解 ;通过对基片加热材料的微波设计 ,在MPCVD装置中获得大于基片台直径的均匀温度分布区。

In order to improve the heating system in microwave plasma chemical vapor deposition device, a new technique line is presented, namely, substitutes substrate heating material for ordinary heating methods. A microwave axial symmetry temperature field model is presented and its general solution is also obtained. By microwave designing for substrate heating materials, the larger uniform temperature field areas than the diameter of substrate holder in MPCVD device is obtained.