摘要
提出了MOS电容线性电压扫描法产生寿命测量的新方法。通过在MOSC t曲线上读取n个不同时刻的电容值 ,计算出相应的产生寿命值 ,其精度随读取点的增加而提高 ,该方法也特别适合于计算机辅助测量系统。
A new method of measuring generation lifetime from linear-sweep MOS C-t transient was suggested.By reading out several values of high frequency MOS capacitance at different time,the generation lifetime could be determined.Moreover,the precision of generation lifetime would be improved with the number of points read out.In addition,this method was especially suitable for computer-aided measurement.
出处
《真空电子技术》
2002年第5期33-35,共3页
Vacuum Electronics