扩散硅压力传感器性能优化研究

A Study on Improving Performance of Diffuse Silicon Pressure Sensors

本文论述了实现扩散硅压力传感器性能优化的一些技术措施、设计原理和工艺技术.采用矩形双岛硅膜结构等新型微机械结构可提高灵敏度和精度并实现过压保护;通过改善工艺并进行表面钝化、改进封装工艺与结构等可改善稳定性;用恒压源及三极管补偿法和等效电阻最佳耦合法可对其灵敏度、零位温度系数进行补偿;采用各向异性腐蚀工艺技术可实现集成化生产.

Presented in this paper is such new design and technology for improving performance of diffuse silicon pressur sensors. Using such new micromachined, structure as twin rectangular silicon island structure, the sensitivity and accuracy can be enchanced and protection to overpressure can be carried out By improving process technology and making surface passivation as well as improving package technology and structure the stability becomes better. By using triode compensation at constant voltage excitation the TCS can be reduced to near zero. For TCO compensation a optimum matched method based on thermosensitive resistors can be employed. Batch manufacture can be easily carried out by using anisotropic etching of (100) silicon.