TiO_2—Nb_2O_5系复合氧化物半导体的氧敏特性

The Oxygen-Sensitive Properties of the TiO_2-Nb_2O_5 System Compound Oxide Semiconductor

简要介绍TiO_2—Nb_2O_5复合氧化物半导体的氧敏特性,指出作为理论空燃比(A/F)检测用氧敏材料TiO_2 80mol％以及Nb_2O_595mol％的组成要比单一的TiO_2和Nb_2O_5具有更高的灵敏度和更好的温度稳定性。结构分析指出它们分别是掺Ti的Nb_2O_5的固溶体以及掺Nb的TiO_2固溶体与复合氧化TiNb_2O_7的混合体,并作简要的讨论。

Oxygen sensing properties of TiO2-Nb2O5 system semiconductor are briefly introduced. The compositions of TiO2 :N2O5 = 5:95 and 80:20 in molar ratio lead to higher sensitivity and temperature stability than those of seperate Nb2O5 or TiO2 as a stoichiometric A/F sensor material. These compositions are a solid solution of TiO2 doped with Nb or Nb2O5 doped with Ti, and the mixture of that with TiNb2O7, respectively. The effect of the compositional change of the binary materials on oxygen sensing properties are discussed.