高注量中子辐照金红石单晶电学特性的研究

Electrical Properties of Rutile Single Crystal Irradiated by High Jection Quantity Neutron

金红石单晶体经中子辐照后,不仅由无色透明变为深兰色,而且导电特性发生很大变化,且由高绝缘材料变为n型半导体.作者分别在低温、室温及高温下,研究了样品电阻随温度的变化关系,并在空气和真空气氛下,对比研究了气氛对辐照后样品导电特性的影响.结果表明,金红石晶体经中子辐照后,在低温下具有典型的半导体导电特性;在高温下于空气中退火,样品会被逐渐氧化,最后变为无色的绝缘体;在10-4Pa高真空气氛中退火,样品表现出点缺陷导电行为,且缺陷离子具有两个不同的激发能级(0.06eV和0.12eV),分别对应子H+和Ti3+,且在整个过程中没有发现样品被氧化.

The colorless rutile crystal would be turned into deep blue after irradiated by jection quantity neutron and its electrical property gets large change, from high insulator to ntype semiconductor.The relationship of sample resistance with temperature and the effect of annealing atmosphere on the electrical property of sample have been studied.It is shown that the rutile crystal has typical conductive property of semiconductor at low temperature .At high temperature ,it is oxidized into colorless insulator in air condition.in 10-4Pa high vacuum condition ,it presents conductive action of dot defects without oxidation.The excitation energies of the defects are 0.06eV and 0.12eV.