半导体漂移-扩散方程解的上下界整体估计

Global Upper and Lower Bounds of Solutions to the Drift-diffusion Semiconductor Equations

考虑漂移 -扩散半导体方程瞬态解的整体有界性估计问题 .在迁移率和产生 -复合满足适当条件下 ,应用 Stampacchia的最大模估计方法 。

The global bounded of the time-dependent drift-diffusion model for semiconductor devices is studied. Under certain assumptions on the mobilities and generation-recombination terms, the global bounded estimates of the solutions are proved by using Stampacchia-type estimation technique.