不同电子阻挡层的紫光LED特性研究

Investigation of Characterization of Violet Light Emitting Diodes with Different Electron Block Layers

通过设计包括不同Al含量的单层p-AlGaN电子阻挡层与10对p-AlGaN/GaN超晶格电子阻挡层的三种紫光LED结构,利用APSYS软件理论模拟研究了400nm紫光LED的光电性能,并着重研究了电子阻挡层结构对紫光LED的光电性能的影响。APSYS软件的模拟结果显示,10对p-AlGaN/GaN超晶格电子阻挡层对光输出功率(LOP)的提升优于单层p型AlGaN电子阻挡层。为验证理论模拟结果,使用MOCVD系统制备了三种紫光LED外延片,并将外延片加工成紫光芯片,分析了不同电子阻挡层对紫光LED光电性能的影响。实验的光电测试结果显示,带有10对p-AlGaN/GaN超晶格电子阻挡层的400nm紫光LED发光效率高于另外两种紫光LED,在输入20mA电流条件下,其光输出功率为21mW,具有商用价值。

Three violet light emitting diodes with single layer p-AlGaN with different Al content and ten pair p-AlGaN/GaN supper lattice electron block layer were designed.The optoelectronic characterization was investigated using APSYS software.The influence of electron block layer on the optoelectronic characterization was investigated.The simulation results show that the light output power of LED with ten pair p-AlGaN/GaN is better that the LED with single layer p-AlGaN electron block layer.To verify the simulation results,the epilayer and LED chip were prepared by MOCVD equipment and chip fabrication process.It is shown that the output power of violet of ten pair p-AlGaN/GaN supper lattice electron block layer is higher than the other violet LED.With the input current of 20 mA,the output power is 21 mW.Therefore,the LED can be used for commercial application.