摘要
报道了一种基于InGaNAs/GaAs多量子阱的1.3μmGaAs基"一镜斜置三镜腔"光探测器,采用分子束外延(MBE)技术在GaAs衬底上直接生长高质量的GaAl/AlAs分布布拉格反射镜(DBR)和InGaNAs/GaAs多量子阱吸收层,实现了单片集成的GaAs基长波长"一镜斜置三镜腔"光探测器。探测器的峰值响应波长位于1298.4nm,光谱响应线宽(FWHM)为1.0nm,量子效率为3%,在零偏压下其暗电流密度为3.75×10-13A/μm2。
Based on InGaNAs/GaAs multi-quantum-well absorption layers,a one-mirror-inclined three-mirror cavity photodetector operating at 1.3 μm is demonstrated.The GaAs/AlAs distributed Bragg reflectors(DBR)and InGaNAs/GaAs absorption layers are grown on GaAs substrate by molecular beam epitaxy(MBE).The monolithic integration of a GaAs-based one mirror inclined three-mirror cavity photodetector is realized.A peak quantum efficiency of 3% with a full width at half maximum of 1 nm is obtained at 1 298.4 nm,the dark current density of the photodetector is 3.75×10-13 A/μm2 at a bias of 0 V.
出处
《光电子．激光》
EI
CSCD
北大核心
2009年第1期12-15,共4页
Journal of Optoelectronics·Laser
基金
国家“973”计划资助项目(2003CB314900)
国家“863”计划资助项目(2006AA03Z416,2007AA03Z418)
国家自然科学基金资助项目(60576018)
国际科技合作重点项目计划(2006DFB11110)
高等学校学科创新引智计划资助项目(B07005)
