Ⅴ/Ⅲ对P型GaP掺杂及红光LED量子效率的影响

The influence of Ⅴ/Ⅲ ratio to doping in P—GaP and Red LED

利用低压金属有机物化学气相沉积(LP-MOCVD),对红光发光二极管(LED)的窗口层掺杂进行研究。分别在Ⅴ/Ⅲ比为13、26和52的情况下生长GaP材料,结果发现,Ⅴ/Ⅲ比影响Mg的掺杂浓度和载流子迁移率。在上述Ⅴ/Ⅲ比下生长的GaP,外延生长出红光LED外延片并制备器件,结果发现,生长GaP层时,Ⅴ/Ⅲ比为52的红光LED与Ⅴ/Ⅲ比为13相比,输出光功率提高了23.7%,轴向光强提高了20.4%。

The doping characteristics in the window layer of red LED have been studied in LP-MOCVD system.GaP material has been grown when V/ⅡI ratios are 13,26 and 52,respectively.The experimental results indicate that V/ⅡI ratio effects carrier concentration and mobility.Finally,red LED with GaP window layer has been fabricated,where GaP has been grown under the above-mentioned V/ⅡI ratios.The result shows that the output power of LED with GaP layer,in which the V/ⅡI is 52,is increased by 23.7% in contrast with LED with GaP layer in which V/ⅡI is 13,while the light intensity increases20.4%.