期刊文献+

快速软恢复二极管局域寿命控制数值分析 被引量:1

Numerical Analysis of Local Lifetime Control for Fast Soft Recovery Diode
下载PDF
导出
摘要 采用混合器件模型研究了局域寿命控制技术对快速软恢复功率二极管静态和动态特性的影响 ,模拟结果表明 :低寿命区的最佳位置处于基区靠近阳极 ,其最佳宽度取决于载流子寿命减少的数量。 The effects of localized lifetime control technique on the static and dynamic characteristics of a power PIN diode are investigated by use of mixed device circuit model. The simulations show that the optimal position for the low-lifetime region is at the beginnig of the base region on the anode side, while the optimal width of the low-life-time region depends on the amount of carrier lifetime reduction.
机构地区 西安理工大学
出处 《电力电子技术》 CSCD 北大核心 2002年第6期70-72,共3页 Power Electronics
关键词 二极管 局域寿命控制 数值分析 载流子 diode carrier lifetime local lifetime control
  • 相关文献

参考文献4

  • 1[1]Mogro-Campero A, Love R R, Chang M F, et al. Loca lized lifetime control in insulated-gate transistors by proton implantation[J]. IEEE Trans. on Electron Devices, 1986(33): 1667~ 1671.
  • 2[2]Vobecky J, and Hazdra P. Future Trends in Local lifetime Control[C]. Proc. ISPSD Conf., 1996 : 161 ~ 164.
  • 3[3]Benda V. Design Consideration for Fast Soft Reverse Recovery Diodes[C]. Prec. EPE Conf., 1993 :288~292.
  • 4[4]Vodecky J, Hazdra P and Homola J. Optimization of Pow er Diode Characteristic by Means of Ion Irradiation [J] IEEE Trans. on Electron Devices, 1996(43):2283-2289.

同被引文献19

  • 1李方正,徐勤富,赖建军,李光升.PiN二极管的一种改进型PSpice模型[J].电工技术学报,2011,26(S1):172-176. 被引量:5
  • 2王振民,张芩,薛家祥,黄石生.快速功率二极管正反向恢复特性仿真研究[J].电力电子技术,2007,41(5):92-94. 被引量:5
  • 3Lutz J,Baburske R,Chen M,et al.The nn + -junction as the key to improved ruggedness and soft recovery of power diode[J].IEEE Transactions on Electronic Devices,2009,56(11): 2825-2832.
  • 4Humbel O,Galster N,Dalibor T,et al.Why is fast recovery diode plasma-engineering with ion-irradiation superior to that with emitter efficiency reduction[J].IEEE Transactions on Power Electronics,2003,18(1): 23-29.
  • 5Domeij M,Lutz J,Silber D.On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche[J].IEEE Transaction on Electron Devices,2003,50(2): 486-493.
  • 6Rahimo M T,Shammas N Y A.Freewheeling diode reverse-recovery failure modes in IGBT applications[J].IEEE Transactions on Industry Applications,2001,37(2): 661-670.
  • 7Baburske R,Heinze B,Lutz J,et al.Charge-carrier plasma dynamics during the reverse-recovery period in p + -n - -n + diodes[J].IEEE Transaction on Electron Device,2008,55(8): 2164-2172.
  • 8Vobecy J,Hazdra P.High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum[J].IEEE Electron Device Letters,2002,23(7): 392-394.
  • 9Vobeckyy J,Hazdra P,Zaahlava V.Helium irradiated high-power P-i-N diode with low on-state voltage drop[J].Solid-State Electronics,2003,47(1): 45-50.
  • 10Felsl H P,Heinze B,Lutz J.Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions[J].IEE Proceedings of Circuits Devices System,2006,153(1): 11-15.

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部