期刊文献+

Characterization of Li-rich layered oxides by using transmission electron microscope

Characterization of Li-rich layered oxides by using transmission electron microscope
下载PDF
导出
摘要 Lithium-rich layered oxides(LrLOs) deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Lithium-rich layered oxides(LrLOs) deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay.
出处 《Green Energy & Environment》 SCIE 2017年第3期174-185,共12页 绿色能源与环境(英文版)
基金 finically supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100100) Strategic Priority Research Program of Chinese Academy of Sciences (CAS, Grant No. XDA09010101) Ningbo Key Science and Technology Projects "Industrial Application Development of Graphene" (Grant No. 2014S10008)
关键词 Lithium-ion battery Transmission electron microscope Lithium-rich layered oxide Cathode material Lithium-ion battery Transmission electron microscope Lithium-rich layered oxide Cathode material
  • 相关文献

参考文献1

二级参考文献18

  • 1Sharma V K, Pattanaik M, Raj B. INDEP approach tbr leakage reduction in nanoscale CMOS circuits. International Journal of Electronics, 2015, 102(2): 200.
  • 2Kiln S H, Mooney V J. Sleepy keeper: a new approach to low leakage power VLS1 design. IFIP International Conference on very Large Scale Integration, 2006:367.
  • 3Kao J. Dual threshold voltage domino logic. Proceedings of 25th European Conference on Solid State Circuits, 1999:118.
  • 4Kursun V, Friedman E G. Sleep switch dual threshold voltage domino logic with reduced standby leakage current. IEEE Trans VLSI Syst, 2004, 12(5): 485.
  • 5Kursun V, Friedman E G. Domino logic with variable threshold voltage keeper. IEEE Trans VLSI Syst, 2003, 11(6): 1080.
  • 6Heo S, Asanovic K. Leakage biased domino circuits for dynamic fine-grain leakage reduction. Symposium on VLSI Circuits, Hon- olulu, 2002:316.
  • 7Pandey A K, Mishra R A, Nagaria R K. Leakage power analysis of domino XOR gate. ISRN Electron, 2013, 2013(7): 1.
  • 8Chen Z, Johnson M, Wei L, et al. Estimation of standby leak- age power in CMOS circuits considering accurate modeling of transistor stacks. International Symposium on Low Power Elec- tronics and Design, 1998:239.
  • 9Wong J, Gong N, Hou L, et al. Low power and high perlbr- mance CMOS XOR/XNOR gate design. Microelectron Eng, 2011, 88(8): 2781.
  • 10Mutoh S, Douseki T, Matsuya Y, et al. 1-V power supply high speed digital circuit technology with multithreshold voltage CMOS. IEEE J Solid-State Circuits, 2011, 30(8): 847.

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部