原子层沉积Al2O3薄膜的制备与性能研究

Preparation and properties of Al2O3 films deposited by atomic layer

采用原子层沉积法分别在Si片和玻璃片上制备了Al2O3薄膜,并用SEM、XRD、XPS、椭偏测厚仪、紫外可见分光光度计和HP4284A精密LCR测试仪对Al2O3薄膜的表面形貌、微观结构、组成成分、薄膜厚度、光学特性和电学特性进行了分析。得出了以下结论:Al2O3薄膜的表面粗糙度随沉积温度的增大而减小,随TMA脉冲时间的增大而增大;在可见光区拥有高透射比;满足化学成分配比,即Al:O=2:3;介电常数K在7~10之间;在沉积温度为300℃,TMA脉冲时间为0.1s制备的性能最为优异。

Al2 O3 thin films were prepared on Si wafers and glass substrates by atomic layer deposition.SEM and XRD,XPS,ellipsometry,UV-visible spectrophotometer and HP4284 A precision LCR tester were used on the surface morphology,microstructure,composition,thickness,optical properties and electrical properties of Al2 O3 thin film were analyzed.The main conclusions were as follows:the surface roughness of the Al2 O3 thin film decreases with the increase of deposition temperature and increases with the increase of Trimethyl Aluminum(TMA)pulse time,and has a high transmittance in the visible region.The excellent properties were obtained when the deposition temperature was 300℃and the pulse time of TMA was 0.1 s.