过度金属表面CVD石墨烯的生长激励研究进展

Growth mechanisms of graphene prepared by CVD on transition metals substrates

石墨烯由于其独特的优异性能逐渐成为新材料领域的研究热点。在石墨烯的各类制备方法中,CVD法已然成为大面积石墨烯制备的主流方法。与铜表面形核生长石墨烯相比,钌、铱、镍、钴等过渡金属作为CVD法制备石墨烯的衬底时,其生长机理完全不同于前者。综述了过渡金属表面CVD石墨烯的生长机理,并总结了石墨烯大规模生产和金属催化剂再利用所面临的困难和挑战。

Graphene has become the focus of research recently due to its unique excellent properties. Various methods have been proposed for the synthesis of graphene and chemical vapor deposition(CVD) appears to be the most promising route for synthesizing largearea graphene. For Cu catalyst, the formation of graphene can be explained by the surface growth model, in which carbon aggregates at the surface of Cu to form graphene. Graphene are formed at different mechanism on different crystalline facets for Ru, Ir, Ni and Co. This review discusses the fundamental mechanisms of the synthesis of graphene from various transition metals through a CVD process and concludes the difficulties and challenges involved in largescale graphene synthesis and the reuse of the catalysts.