GaN∶Er材料研究进展

Progress of GaN∶Er Materials

半导体行业是一个基础性行业,同时在每个领域所占的比重也越来越高。Er掺杂的GaN材料器件,既具备稀土元素的性能,又充分发挥了半导体材料的优势。本文简要介绍了稀土Er掺杂GaN材料的制备方法,以及目前有关该材料及器件在光学性能方面的研究进展,并对其发展趋势进行了展望。

The semiconductor is a basic industry,and the proportion in each area is also increasing. The device of Er-doped GaN material,not only has the performance of rare earth elements,but also has the advantages of semiconductor material. This article briefly describes the preparation of Ga N∶ Er materials,as well as studies on the research progress of the materials and devices of GaN ∶ Er in the optical performance,and the prospect of its development trend.