磁控溅射金属预置层后硒化制备Cu_2ZnSnSe_4薄膜

Growth of Cu_2ZnSnSe_4 Thin Films by Selenization of Sputtered Metallic Precursors

采用磁控溅射Zn-Cu-Sn-Cu金属预置层并后硒化的方法在镀钼玻璃衬底上制备了CZTSe薄膜。利用X射线衍射仪(XRD)、拉曼光谱测试仪(Raman)、扫描电子显微镜(SEM)、能谱仪(EDS)和热探针对所制备CZTSe薄膜的晶相结构、拉曼位移、表面形貌、化学组分和导电类型进行表征分析,分析结果表明:所制备CZTSe薄膜结晶质量好、无二次相、晶粒均匀致密、化学组分是贫铜富锌的,且导电类型为p型,符合高效率太阳电池吸收层的要求。将CZTSe吸收层制备成有效面积为0.35 cm2的Mo/CZTSe/Cd S/i-ZnO/Zn O:Al/Ni-Al电池,其效率为1.17%,开路电压为419 m V,短路电流密度为10.21 m A/cm^2,填充因子为27%。

CZTSe thin films were fabricated on Mo-coated soda-lime glass substrates. The crystal structure,Raman shift,surface morphology,chemical composition and conduction type of CZTSe thin films were investigated by X Ray Diffraction( XRD),Raman spectroscopy( Raman),scanning electron microscopy( SEM) equipped with an energy dispersive spectrometer( EDS) and thermal probe. The results show that the preparation of CZTSe film with dense and uniform crystal grains which also demonstrates good quality of crystallization, besides there is no other second phase. The chemical composition of CZTSe was poor copper and zinc rich,and p-type conduction. The active area of 0. 35cm^2 cells was fabricated as the order of Mo / CZTSe / Cd S / i-ZnO / ZnO ∶ Al / Ni-Al,which has 1. 17%efficiency,an open-circuit voltage of 419 m V,current density of 10. 21 m A / cm^2 and fill factor of 27%.