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浓HNO_3修饰基板液相沉积制备SrTiO_3薄膜

Substrate Modification by Concentrated HNO_3 and Preparation of SrTiO_3 Thin Film by Liquid Phase Deposition
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摘要 采用液相沉积技术,以氟钛酸铵、硼酸和硝酸锶为原料,在前驱液pH=3.5、沉积温度60℃,沉积时间6 h条件下成功制备了SrTiO_3薄膜。采用接触角测试仪对浓HNO_3修饰的玻璃基板进行亲水性测定采用X射线衍射仪技术和扫描电镜表征薄膜相组成和微观形貌。研究结果表明:浓HNO_3修饰30 min,后玻璃基板接触角下降到10.404°,沉积制备的SrTiO_3薄膜结晶良好且纯度较高在基板表面以纤维簇状模式生长。文章同时探讨了SrTiO_3薄膜生长机理。 SrTiO_3 thin film was successfully prepared by liquid phase deposition method using(NH_4)_2TiF_6,H_3BO_3 and Sr(NO_3)_2 as raw materials under specific factors(pH = 3.5,60 ℃,6 h).Surface hydrophilicity of glass substrate was measured by contact angle meter.Phase composition and microscopic morphology of SrTiO_3 thin film were characterized by XRD and SEM.The results show that contact angle value of substrate surface decreased to 10.404° with 30 min modification by concentrated HNO_3.The pure SrTiO_3 thin film is well crystallined with fiber cluster morphology.Growth mechanism of SrTiO_3 thin film was also discussed.
作者 刘剑
出处 《硅酸盐通报》 CAS CSCD 北大核心 2015年第S1期227-230,共4页 Bulletin of the Chinese Ceramic Society
基金 河北省高等学校科学技术研究项目(QN20132015) 唐山市科技计划项目(14130287a) 唐山学院学科建设基金(TSC2013003)
关键词 基板修饰 液相沉积 SRTIO3薄膜 substrate modification liquid phase deposition SrTiO3 thin film
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  • 1BOUZEHOUANE K, WOODALL P, MARCIHAC B, et al. Enhanced dielectric properties of SrTiO3 epitaxial thin film for tunable micro-wave devices [J]. Appl Phys Lett, 2002, 80(1): 109-111.
  • 2JIA Q X, FINDIKOGLU A T, REAGOR D, et al. Improvement in performance of electrically tunable devices based on nonlinear dielectric SrTiO3 using a homoepitexial LaAlO3 interlayer [J]. Appl PhysLett, 1998, 73(8): 897-899.
  • 3COPEL M, DUNCOMBE P R, Neumayer D A, et al. Metallization induced band bending of SrTiO3(100) and Ba0.7Sr0.3TiO3 [J]. Appl PhysLett, 1997, 70:3 227-3 229.
  • 4HASHIMOTO K, XU H, MUKAIGAWA T, et al. Si monolithic microbolometers of ferroelectric BST thin film combined with readout FET for uncooled infrared image sensor [J]. Sens Actuators A, 2001,88: 10-19.
  • 5ZHAO T, CHEN F, LU H, et al. Thickness and oxygen pressure dependent structural characteristics of BaTiO3 thin films grown by laser molecular beam epitaxy [J]. J Appl Phys, 2000, 87:7 442-7 447.
  • 6KAWASAKI M. TAKAHASHI K, MAEDA T, et al. Atomic control of the SrTiO3 crystal surface [J]. Science, 1994. 266:1 540-1 542.
  • 7SHOJI M, SO B B, KEN Numata. Low temperature synthesis of high quality SrTiO3 films [J]. J Vac Soc Jpn, 2002, 45: 90-96.
  • 8SHIMOYAMA K, KIYOHARA M, UEDONO A, et al. Homoepitaxial growth of SrTiO3 in an ultrahigh vacuum with automatic supplying oxygen [J]. Jpn JAppl Phys, 2002, 41: 269-271.
  • 9LIPPMAA M, NAKAGAWA N, KAWASAKI M, et al. Growth modemapping of SrTiO3 epitaxy [J]. Appl Phys Lett, 2000, 76:2 439-2441.
  • 10TERASHIMA T, BANDO Y, IIJIMA K, et al. Reflection high-energy electron diffraction oscillations during epitaxial growth of high- temperature superconducting oxides [J]. Phys Rev Lett, 1990, 65: 2684-2 687.

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