富硅氮化硅薄膜的制备及其性能研究

Preparation and Properties of Silicon-rich Nitride Films

富硅氮化硅薄膜因其具有良好的物理、机械和光学性能,被广泛应用于半导体领域。本文采用磁控共溅射法在玻璃衬底上沉积了富硅氮化硅薄膜,并对薄膜的表面形貌、透射率、反射率和物相等进行了表征。结果表明:随着溅射功率增大,薄膜的颜色加深;在500~900 nm范围内,随着溅射功率增大,薄膜的透过率逐渐降低;在300~500℃退火会使薄膜的透光性变差;所有样品的XRD谱图均未出现明显的衍射峰,说明所沉积的薄膜为非晶结构。

Silicon-rich nitride thin film was widely used as passivation,isolation,capacitor,structural materials in semiconductor and microelectronics fields,because it has good physical,mechanical and optical properties. Silicon-rich nitride thin films on glass were prepared by magnetron sputtering. The following properties are discussed: the films ' surface structure, transmittance, reflectance and crystallization characteristics. The results show that the color of the film getting darker with increasing sputtering power. As sputtering power increased,the transmittance of thin film decreases gradually in the range of 500-900 nm. The transmittance becomes worse for the film annealed at 300-500 ℃. There is only one broad peak in the XRD pattern,indicating these samples are amorphous.