一种适用于VLSI MOS器件的阈电压模型

A Threshold Voltage Model for VLSI MOS Devices

本文从等效浓度的观点出发,提出了一种适用于VLSI MOS器件的阈电压模型,数值结果与二维模拟基本一致。叙述了确定实际阈电压的步骤,可作为器件工艺监控的简便方法。

From the point view of an equivalent doping density, a threshold voltage model for VLSI MOS devices is proposed. The numerical results show a reasonable agreement with two-dimensional simulation. The procedures for determining the actural threshold voltage are presented, which can be used as a simple way to control device technology.