E/D型集成电路中MODFET模型

MODFET's Model Utilized in E/D Mode Integrated Circuits

本文给出了一个E/D型结构集成电路中增强型和耗尽型调制掺杂Ga_(1-x)Al_xAs-GaAs异质结二维电子气场效应晶体管(MODFET)模型,并系统地分析了它们的材料选取和结构参数。便于相容性工艺制造,增强型晶体管用三层结构;耗尽型晶体管用四层结构。计算方法主要应用了二维电子气散射理论,Joyce-Dixon近似,以及泊松方程等。文内给出了主要计算结果。

This paper gives a model for two-dimensional electron gas field effect transistor (MODFET's) utilized in E/D mode integrated circuits with modulation-dopped Ga1-xAlx As-GaAs heterojunctioa, and systematically analyzes their material and device structure parameters. E-mode and D-mode MODFET's are composed of three and four layers, respectively, to use a compatible technology in fabrication. Computations are based on the scattering theory of two dimensional system, Joyce-Dixon's approach, Poisson equation, etc. The paper also presents main theoretical curves.