摘要
本文研究了耗尽型MOS器件的短沟道效应,把Yau的电荷分配理论推广到耗尽型器件,并作了适当修正。提出一种简单而精确的耗尽型短沟道MOS器件阈电压分析模型,与实验数据吻合良好。该模型可以应用于这类器件及电路的CAD。
The short channel effect of depletion mode MOSFET is studied in this paper. The charge sharing model presented by Yau is extended to the depletion mode MOSFET and some modification is made. An accurate and simple analytical model of threshold voltage for depletion mode MOSFET is presented. It is in good agreement with experimental data and can be used in CAD of MOS devices and circuits.
出处
《固体电子学研究与进展》
CAS
1987年第2期97-103,共7页
Research & Progress of SSE
基金
中国科学院科学基金资助课题
