摘要
本文报导了用实验方法研究Fabry-Perot型GaAs-GaAlAs DH半导体激光放大器的结果。在共振放大条件下测量了总增益G_C及其随注入电流的变化,并通过G_C随入射光频率γ的变化测得频率带宽⊿v_(1/2)。用Hakki-Paoli的方法测量了光放大器的增益系数随注入电流的变化,求得单程增益G_S随注入电流的变化,利用G_S计算了G_C随注入电流的变化及频率带宽⊿v_(1/2)。计算结果和实验值符合较好。
A Fabry-Perot type GaAs-GaAlAs DH Semiconductor Laser Amplifier is investigated experimentally.The overall gain Gc, the frequency bandwidth △ v1/2 and the variation of Gc with injection current are measured under the resonant condition. The dependence of gain coefficient of the laser amplifier oa injection current is determined by Hakki-Paoli method, and then the response of the single-pass gain Gs is calculated from which Gc as a function of injection current and △v1/2 are obtained. The experimental results are in satisfactory agreement .with calculated results.
出处
《固体电子学研究与进展》
CAS
1987年第2期114-117,共4页
Research & Progress of SSE