用PECVD法制备SiO_2进行Zn在GaAs中掩蔽扩散研究

Investigation of PECVD-Si0_2 Films on GaAs as Zn Diffusion Mask

本文报导丁GaAs表面上淀积液态源PECVD-SiO_2膜掩蔽Zn扩散的规律,估算了Zn在SiO_2膜和GaAs中扩散系数的比值为(1.04～1.85)×10^(-3),在700℃下Zn在GaAs中的横向扩散为结深的3～7倍。这种方法制备的SiO_2膜已应用于GaAs电调变容二极管和LPE-Ga_(1-x)Al-xAs/GaAs DH激光器的研制。

Authors have studied the Zn diffusion in GaAs using PECVD-SiO2 films as the mask. The ratio of the diffusion coefficient of Zinc in SiO2 to that in GaAs is estimated to be (1.04-1.85)×10-3. It has been observed that lateral diffusion distance of Zn in GaAs is 3-7 times the junction depth at 700℃. This kind of SiO2 film mask has been applied to the fabrication of electric tuning varactor diodes and LPE-Ga(l-x) AlxAs/GaAs DH lasers.