GaN HEMT微波功率管直流和射频加速寿命试验

DC and RF Accelerated Life Testing of GaN Microwave Power Device

分别选用南京电子器件研究所研制的1.25mm栅宽GaN HEMT和12mm栅宽GaN功率管,对小栅宽器件进行三温直流加速寿命试验,评估其直流工作可靠性,试验结果表明该器件在125℃沟道温度条件下工作的失效率为1.86×10-9/h;对大栅宽器件进行脉冲射频加速寿命试验,评估其射频工作可靠性,试验结果表明该器件在125℃沟道温度条件下工作的失效率小于1.02×10-7/h。

1.25 mm gate-width GaN HEMT and 12 mm gate-width GaN microwave power amplifier fabricated by Nanjing Electronic Devices Institute were chosen for the test.The DC working reliability of the 1.25 mm gate-width GaN HEMT was evaluated by using three-temperature accelerated life testing,and the results showed that the failure probability was 1.86×10-9/h at the channel temperature of 125℃;The RF working reliability of the 12 mm gate-width GaN HEMT was evaluated by using RF accelerated life testing,and the results showed that the failure probability was less than 1.02×10-7/h at the channel temperature of 125℃.