100A/1200V Si/SiC混合模块对比研究(英文)

Comparative Study of 100A/1200 V Si/SiC Hybrid IGBT Modules

采取对比的方法将Si IGBT/Si FRD模块与Si IGBT/SiC SBD模块静态及动态特性进行了测量与分析。测试表明,将Si IGBT模块中Si FRD替换为SiC SBD后开关损耗减小明显,提升效率的同时可大大提高功率模块的工作频率,降低系统体积。为了解释Si IGBT/SiC SBD混合模块开通过程中电流电压振荡现象,本文对模块开通与关断过程中电流的流通路径进行了对比,用以解释产生开通振荡的原因。分析中发现,开通振荡主要来自于模块封装杂散电感与IGBT输出电容及SiC SBD结电容产生的LC谐振。SiC SBD由于结电容较大而导致开通振荡较为明显。因此,为了提高SiC器件系统的可靠性,需要找到一种低电感封装技术,满足SiC器件封装要求。

A comparative study of SiC SBD in IGBT module is presented.The static and dynamic characters are measured and analyzed,revealing that the IGBT switching losses can be drastically reduced by replacing the silicon freewheeling PiN diode with SiC SBD,which enables the hybrid module to be more efficient and capable of shrinking the size of the power system by increasing the switching frequency.In order to explain the current and voltage oscillation during turn-on process of the hybrid module,this paper looks into the different current paths during turn-on and turn-off of the IGBT module to illustrate the conditions for oscillation.The oscillation is LC resonant,which is triggered by not only the stray inductance of the package but also the device capacitance in the IGBT and the freewheeling diode.Therefore,more work is necessary in low parasitic inductance package technology for SiC device,thus the system performance and reliability can be improved.