平面石墨烯纳米带隧穿场效应管理论设计

The Theoretical Design of Planar Graphene Nanoribbon Tunneling FET

不同于传统的立体结构隧穿器件,本文给出了一种新型平面石墨烯纳米带隧穿场效应管的理论设计。基于石墨烯纳米带几何宽度调控禁带宽度的思想,构建"双十字形"石墨烯纳米带超晶格作为沟道,设计了石墨烯纳米带超晶格场效应管。从能带结构和传输谱上给出了该器件负微分电阻特性的理论解释,并由器件的输出特性得到了验证。在此基础上对器件的隧穿工作机理做出了探讨。该场效应管在一个器件上实现了多个负微分电阻区域,可应用于多值逻辑电路设计。

Different from the traditional vertical tunnel devices,novel planar graphene nanoribbon tunneling field effect transistor was theoretically designed.Based on the idea that bandgap could be modulated with geometrical width,the graphene nanoribbon superlattice field effect transistor(GNSL FET)was proposed,using a'double-cross junction'graphene nanoribbon superlattice as the channel.The negative differential resistance phenomenon in this device was explained by band structure and transmission coefficient analysis,and verified by the output characteristics,thus the tunnel working mechanism was discussed.This novel FET realizes several negative differential resistance regions in one device,which can be used in the design of multi-valued logic circuits.