摘要
为研究石墨烯-ZnO复合纳米材料中的电荷转移情况,将化学气相沉积法生长的石墨烯转移到SiO2/Si衬底上,用电子束曝光的方法制备金电极后,再通过热蒸发的方法生长了ZnO纳米颗粒,得到G-ZnO复合纳米材料的场效应管器件。通过研究紫外光照对该器件转移曲线的影响,探究了该复合材料中的电荷转移机理,观察到电子从ZnO纳米颗粒到石墨烯的转移。
Graphene-ZnO nanocomposite field effect transistor was produced to study the charge transferring properties in this work.Chemical vapor deposited graphene was transferred to SiO2/Si substrate.The gold electrode was prepared by electron beam lithography,and the ZnO nanoparticle was grown by heat evaporation.The influence of ultraviolet light on the transferring curve of the field effect transistor was investigated,and the electron migration from ZnO nanoparticle to graphene was observed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2015年第5期492-496,共5页
Research & Progress of SSE
基金
流体物理研究所发展基金资助项目(SFZ20120301)
关键词
复合材料
纳米材料
石墨烯
氧化锌
电荷转移
composite material
nano-material
graphene
ZnO
charge transferring
