微波传输用HTCC金属化钨浆料的研制

Study on Tungsten Conductor Pastes for High Temperature Co-fired Process

研究了高温共烧厚膜导体钨浆料的制备工艺,分析了金属钨粉微观形貌及粒度分布,无机粘结相含量对印刷分辨率、金属化与陶瓷基板的结合强度、金属化层方阻值的影响。为满足微电子封装要求,通过选用粒度小于5μm、表面光滑的球形的两种钨粉进行混合,添加适量无机粘结相和以乙基纤维素为主的有机载体,采用球磨或者三轴研磨机进行有效分散,并将浆料粘度控制在一定范围内,制备出适合100μm线宽/间距精细印刷、金属化与陶瓷基板的结合强度54 MPa、方阻值为6mΩ/□的金属化浆料。将研制的金属化钨浆料应用在作为微波器件封装外壳的信号输入输出端口的陶瓷绝缘子上,在29~31GHz的Ka波段,绝缘子的插入损耗为0.4dB,电压驻波比(VSWR)小于1.15。

Techniques to manufacture tungsten conductor pastes for high temperature co-fired process were researched in this paper,and the effects of Microstructure and distribution of tungsten powders,the content of nonmetallic on printing,metallization combination strength and sheet resistance of the paste were analyzed as well.In order to meet the needs of microelectronic packaging,two kinds of tungsten powder with globularity and the diameter under 5μm were mixed up.A certain quantum of nonmetallic powder and organic carrier were added.Tungsten powder,nonmetallic powder and organic carrier were separated with muller.As a result,tungsten paste with sheet resistance of 6mΩ/□and combination strength of up to 54 MPa of the metallization and alumina co-fired ceramic substrate were realized,which could be used in fine line printing of 100μm on thick film integrated circuits process.Tungsten paste was applied on insulator of microwave package as conductor material connecting the devices in the shell and the assembly.Tested in 29 GHz to 31 GHz Ka band,VSWR was less than 1.15 and insertion loss was 0.4dB.