W波段GaN单片功率放大器研制

Fabrication of W-band GaN MMIC PA

报道了W波段GaN三级放大电路的研制结果。采用电子束直写工艺在AlGaN/GaN HEMT外延结构上制备了栅长100nm的'T'型栅结构。器件直流测试最大电流密度为1.3A/mm,最大跨导为430mS/mm;小信号测试外推其fT和fmax分别为90GHz及210GHz。采用该器件设计了三级放大电路,在75~110GHz频段内最大小信号增益为21dB。该单片在90GHz处的最大输出功率可达1.117W,PAE为13%,功率增益为11dB,输出功率密度为2.33 W/mm。

A three-stage W-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA)was reported.Electron-beam lithography was applied to define a 100 nm Tshaped gate on the AlGaN/GaN HEMT structure.This process exhibits a maximum DC drain current density of 1.3A/mm and an extrinsic transconductance(Gm)of 430mS/mm.An extrinsic current gain cutoff frequency(fT)of 90 GHz and a maximum oscillating frequency(fmax)of210GHz are deduced fromS-parameter measurements.The MMIC PA offers peak small singal gain of 21 dB at 75~110GHz bandwidth.Moreover,the fabricated MMIC PA achieves output power of 1.117 Wat 90GHz in continuous-wave mode,with an associated power added efficiency of 13% and an associated power gain of 11 dB.The power density is 2.33 W/mm.