摘要
基于现有仿真平台,设计一款3 300V/50A逆导型绝缘栅双极晶体管器件(逆导型IGBT或RC-IGBT),元胞采用场截止型平面栅结构,元胞设计中采用载流子增强技术(EP),元胞注入采用自对准工艺,背面P型集电极采用透明集电极技术,降低IGBT工作模式下的饱和压降。采用二维数值仿真研究了器件结构及结构参数对器件性能的影响,通过结构参数拉偏,折衷优化IGBT与内集成二极管的性能参数,仿真得到的3 300V/50A逆导型IGBT器件饱和压降为3.4V,二极管导通压降为2.3V,阈值电压为5.6V,击穿电压为4 480V,与相同电压等级的分立IGBT器件和二极管性能相当。
A 3 300V/50 AReverse Conducting Insulator Gate Bipolar Transistor(RC-IGBT)based on the existing simulation platform was designed,which had an internal transparent collector and a field stop planner cell structure adopting enhanced planar technology(EP)and self-aligned implantation.The influence of structure and different parameters on device performance was studied with the aid of 2-D device simulations.The trade-off between IGBT and internal diode was optimized by changing the device parameters.The simulated saturation voltage,conduction voltage drop of internal diode,threshold voltage and breakdown voltage of the 3 300V/50 A RC-IGBT are 3.4V,2.3V,5.6V and 4 480 V,respectively,which aresimilar to the discrete IGBT and diode with the same voltage level.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2016年第5期406-410,共5页
Research & Progress of SSE
基金
国家电网公司科技项目<高压逆导型IGBT的可行性研究>(5455DW150011)
