SiN钝化对InGaAs/InP双异质结双极性晶体管热稳定性的影响

Effect of SiN Passivation on the Thermal Stability of InGaAs/InP DHBTs

报道了热应力下InGaAs/InP双异质结双极性晶体管(DHBT)的可靠性。对钝化与未钝化器件进行了应力温度为250℃、应力时间达到1 000h的存储加速寿命试验。从Gummel曲线可以发现,未钝化器件的电流增益在48h应力时间时降低了18.3%,而钝化器件在1 000h应力时间时仅下降了1.6%,说明基于SiN介质薄膜的表面钝化工艺有效提高了InP HBT的可靠性,这对于InP基器件和电路的实际应用具有重要意义。

The reliability of InP DHBT under thermal stress was reported.Storage accelerated aging tests were conducted on passivated and unpassivated InP/InGaAs HBT at a stress emperature of 250℃ up to 1 000 hours.From the Gummel characteristics,it can be observed that the current gain of passivated device fell by only 1.6% after 1 000 hours stress time,while it dropped by 18.3% at 48 hours stress time in unpassivated device.This indicates that the surface passivation process based on SiN dielectric film may effectively improve the reliability of InP DHBT,which is critical for real application of InPbased device and circuit.