P波段超大功率50V GaN HEMT

50V Ultra High Power GaN HEMTs for P Band Application

报道了0.5μm工艺千瓦级GaN HEMT器件在P波段应用。通过采用AlN插入层,大幅降低了器件在大功率工作时的漏电,同时大幅提高器件输出功率密度。同时通过对背势垒结构缓冲层的优化,提高了器件击穿电压,从而提高器件抗失配比(VSWR)至5∶1。GaN HEMT器件设计采用双场板结构,采用0.5μm栅长工艺制作。器件工作电压为50V,在P波段峰值输出功率1 500 W,漏极效率72%。

A 0.5μm GaN HEMT with AlN insertion layer for P band RF power application has been presented.By utilizing the AlN insertion layer,gate leakage current of the GaN HEMT was greatly reduced and output power density of the device was greatly improved.Based on a GaN heterostructure with optimized AlGaN back barrier,the devices were stable under RF mismatch test with VSWR>5∶1.The GaN HEMT with 0.5μm gate length exhibited distinguished power of 1 500 Wat P band and drain efficiency of 72% under condition of 50 Vdrain voltage.