一款W波段GaN HEMT高谐波抑制八次倍频器MMIC

A W-band GaN HEMT Frequency-multiplier-by-eight MMIC with High Harmonic Suppression

报道了一款采用0.1μm GaN HEMT工艺制作的W波段八次倍频器芯片。该芯片集成了3个二次倍频器和1个驱动放大器。二次倍频器采用有源平衡电路结构以实现较好的功率输出和有效的基波和奇次谐波抑制;驱动放大器采用单级负反馈电路结构,在实现良好输入输出匹配的同时兼顾增益平坦度。最终实现的八次倍频器芯片3 dB工作带宽为16 GHz(84～100 GHz),输出功率大于13 dBm,谐波抑制度大于40 dBc,带内谐波抑制度大于60 dBc。芯片面积3.6 mm×1.7 mm。

A W-band frequency-multiplier-by-eight MMIC was reported,which was fabricated by 0.1μm GaN HEMT technology.Three frequency doublers and a drive amplifier were in the chip.In order to realize better output power and suppress the fundamental and odd order harmonics effectively,an active balanced circuit structure was adopted in every frequency doubler.A single-stage feedback circuit structure was adopted in drive amplifier to provide good input and output matching also gain flatness.Finally the frequency-multiplier-by-eight MMIC achieves 3 dB bandwidth of 16 GHz(84~100 GHz),output power of more than 13 dBm,harmonic suppression of more than 40 dBc and better than 60 dBc in-band.The chip size is 3.6 mm×1.7 mm.