一款0.6～4.2 GHz宽带低噪声放大器设计

Design of a 0.6～4.2 GHz Wideband Low Noise Amplifier

采用0.25μm GaAs E-pHEMT工艺设计和制作了一款0.6～4.2 GHz宽带低噪声放大器芯片。芯片采用电流复用技术,降低了整体功耗,且集成了关断(Shutdown)控制电路用于关断低噪声放大器。测试结果表明,在工作频带内,低噪声放大器增益大于23 dB,增益平坦度在2 dB左右,输入输出回波损耗小于-10 dB,噪声系数低于1 dB,输出1 dB压缩点大于17 dBm,开关时间均在30 ns左右。芯片具有宽带、噪声系数低、集成度高和低功耗等特点,在基站接收系统中具有一定的应用价值。

A 0.6~4.2 GHz wideband low noise amplifier(LNA)chip was designed and fabricated with 0.25μm GaAs E-pHEMT process.The chip reduced power consumption by using current reuse technique,and it integrated a Shutdown control circuit to turn off LNA.Measurement results show that in the operating frequency range,the gain of LNA is larger than 23 dB,the gain flatness is about 2 dB,the input and output return loss is less than-10 dB,the noise figure is less than 1 dB,and the output power at the 1 dB compression point is larger than 17 dBm,the switch time is around 30 ns.The chip features with wideband,low noise figure,high integration density and low power consumption,it has certain application value in base station receiving system.