退火温度对Ag-MgF_2颗粒膜结构和内应力的影响

Effect of anealing temperature on microstructure and residual stress in Ag-MgF_2 complex grain films

报道用电子薄膜应力分布测试仪测量退火温度对Ag -MgF2 复合颗粒薄膜内应力的影响 ,结果表明 ,退火温度在 40 0℃ ,薄膜平均应力最小 ,应力分布比较均匀。XRD分析表明 ,Ag -MgF2 复合颗粒薄膜的内应力主要来自Ag晶粒的生长过程 ,当Ag的晶格常数接近块体时 (40 0℃温度退火 6 0分钟 ) ,Ag-MgF2 薄膜内应力最小。

This paper has investigated the effect of anealing on the residual stress and microstructure of Ag-MgF 2 complex grain films prepared by vapor deposition. X-ray diffraction (XRD) technique was employed to study the microstructure of the films. The results show that the average stress comes from growth of Ag grain, when the crystal lattice constants of Ag approach to the bulk values,the average stress of film is the least at 400℃ anealing temperature.