摘要
We report a simple, cost-effective and repeatable method for fabricating a large area and uniform substrate for surface-enhanced Raman scattering(SERS). The silicon, micromachined by a femtosecond laser, is coated with gold film and then treated through the dewetting process. The morphology shows a higher electric field enhancement due to light trapping. The enhancement factor of the SERS substrate is 9.2 × 107 with a 5 nm-thick film coated. Moreover, it also exhibits a uniform signal through Raman mapping and chemical stability with the greatest intensity deviation of 6% after a month. The proposed technique provides an opportunity to equip microchips with the SERS capabilities of high sensitivity, chemical stability, and homogeneous signals.
We report a simple, cost-effective and repeatable method for fabricating a large area and uniform substrate for surface-enhanced Raman scattering(SERS). The silicon, micromachined by a femtosecond laser, is coated with gold film and then treated through the dewetting process. The morphology shows a higher electric field enhancement due to light trapping. The enhancement factor of the SERS substrate is 9.2 × 107 with a 5 nm-thick film coated. Moreover, it also exhibits a uniform signal through Raman mapping and chemical stability with the greatest intensity deviation of 6% after a month. The proposed technique provides an opportunity to equip microchips with the SERS capabilities of high sensitivity, chemical stability, and homogeneous signals.
基金
supported by the National 973 Program of China(No.2011CB013000)
the National Natural Science Foundation of China(Nos.91323301 and 51322511)
the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708018)